Product Information/ PRODUCTS /Plasma Enhanced Chemical Vapor Deposition System (PECVD)

DESCRIPTION

Product description
Plasma Enhanced Chemical Vapor Deposition System（PECVD）

main feature

RF driven (megahertz and/or kilohertz) top electrode; no RF bias on bottom (substrate) electrode
The substrate is placed directly on the heating electrode
Gas enters the reaction chamber through a showerhead-style inlet on the top electrode
Working pressure 0.5-1.0 Torr
Power density 0.02-0.1Wcm-2 

Advantage

Lower process temperature than traditional chemical vapor deposition
Thin film stress can be controlled by high/low frequency hybrid technology
Plasma dry cleaning process with endpoint control reduces or eliminates the need for physical/chemical cleaning of the reaction chamber
Stoichiometry controlled by process conditions
Provide a wide range of material deposition, including: silicon oxide, silicon nitride and silicon oxynitride deposition, which are widely used in photonic structures, passivation, hard film, etc.

Amorphous silicon（a-Si：H）
Ethyl orthosilicate silica with good step coverage or good step coverage without voids
SiC silicon carbide
diamond-like film​