Product Information/ PRODUCTS / Physical Vapor Deposition System PVD
Physical Vapor Deposition System PVD Physical Vapor Deposition System PVD
specification:
Features:
Excellent step coverage
Standard methods for high-quality Al (including Si/CuTi), TiN, TiW
Maximum of 4 x 200mm or 8 x 75mm cathodes
Substrates placed on a rotating stage
Substrate stage with water cooling/heating capability (up to 400oC)
Pre-sputtering and RF biasing
Parameters: gas flow, pressure, RF power
Typical Applications:
High-quality Al (including Si/Cu/Ti)
Diffusion barrier layers: TiN, TiW (reactive sputtering)
Resistor thin films (NiCr, TaN)
Precious metals: Au, Pt
Contact window: sales@scientek-co.com
DESCRIPTION
Product Description:Physical Vapor Deposition (PVD)
Features:
Excellent step coverage
Standard methods for high-quality Al (including Si/CuTi), TiN, TiW
Maximum of 4 x 200mm or 8 x 75mm cathodes
Substrates placed on a rotating stage
Substrate stage with water cooling/heating capability (up to 400oC)
Pre-sputtering and RF biasing
Parameters: gas flow, pressure, RF power
Typical Applications:
High-quality Al (including Si/Cu/Ti)
Diffusion barrier layers: TiN, TiW (reactive sputtering)
Resistor thin films (NiCr, TaN)
Precious metals: Au, Pt